In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 9R ( 1998-09-01), p. 4949-
Abstract:
The reaction at the Fe/Si interface and the growth mode of Fe on Si(111)-7 ×7
substrate at room temperature were investigated. The Si-2 p core level photoemission spectra as a
function of deposited Fe thickness were measured, and were analyzed by the modified Butera's model based on the semiempirical theory. Islands of
Fe 3 Si phase were formed in the unreacted Fe matrix on Fe thickness of about
1 Å to 10 Å and silicide growth was restricted to the Fe thickness. Bulk Fe was grown by further Fe-deposition.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.4949
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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