In:
Scientific Reports, Springer Science and Business Media LLC, Vol. 5, No. 1 ( 2015-05-27)
Abstract:
Manipulation of electrons in a solid through transmitting, storing and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr 0.2 Ti 0.8 )O 3 /LaAlO 3 /SrTiO 3 heterostructure, where 2DEG is formed at LaAlO 3 /SrTiO 3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I + /I − ratio ( 〉 10 8 at ±6 V) and I on /I off ratio ( 〉 10 7 ). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics.
Type of Medium:
Online Resource
ISSN:
2045-2322
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2015
detail.hit.zdb_id:
2615211-3
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