In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 11R ( 1993-11-01), p. 4907-
Abstract:
Microcrystalline silicon (?c-Si) films have been prepared at 200?C by radio-frequency (rf: 13.56 MHz) plasma-enhanced chemical vapor deposition using pulsed silane flow. The crystalline fraction, X c (Raman), of ?c-Si films approximately 200 nm thick is quantitatively determined by decomposing Raman spectra into three peaks: crystalline, intermediate (small-grain-size-crystalline), and amorphous. The effects of rf power on X c (Raman) and hydrogen content, C H , have been studied. X c (Raman) increases with increasing rf power and tends to saturate; the maximum value of X c (Raman) is 71%. With increasing rf power C H decreases to a minimum value of 4.5% and then increases. Hydrogen introduction into Si films overlapped with hydrogen elimination is responsible for the increase and saturation of X c (Raman) with rf power.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4907
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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