In:
physica status solidi (b), Wiley, Vol. 252, No. 6 ( 2015-06), p. 1239-1243
Abstract:
The ternary compound Cu 2 SnS 3 (CTS) is composed of elements that are low in cost, non‐toxic, and abundant in the Earth's crust. In addition, CTS is a p‐type semiconductor with a high reported absorption coefficient of more than 10 4 cm −1 and a band gap energy of 0.92–1.77 eV. It is, therefore, considered to be a suitable candidate for the absorber layer in thin film solar cells. In the present study, CTS thin films were produced by first depositing precursor films by co‐evaporation of Cu, Sn, and S, and then annealing them. Solar cells were then fabricated using the CTS films as absorber layers, and the dependence of their photovoltaic properties on the annealing temperature was investigated. The solar cell using the CTS thin film annealed at 570 °C exhibited an open‐circuit voltage of 248 mV, a short‐circuit current density of 33.5 mA/cm 2 , a fill factor of 0.439, and a conversion efficiency of 3.66%.
Type of Medium:
Online Resource
ISSN:
0370-1972
,
1521-3951
DOI:
10.1002/pssb.201400297
Language:
English
Publisher:
Wiley
Publication Date:
2015
detail.hit.zdb_id:
208851-4
detail.hit.zdb_id:
1481096-7
Permalink