In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 3S ( 2001-03-01), p. 2013-
Abstract:
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T =100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2013
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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