In:
Applied Physics Letters, AIP Publishing, Vol. 83, No. 5 ( 2003-08-04), p. 1029-1031
Abstract:
Transparent trilayered oxide films of ZnO/NiO/indium tin oxide were heteroepitaxially grown on a YSZ (111) substrate by pulsed-laser deposition combined with a solid-phase-epitaxy technique, and were processed to fabricate a p-NiO/n-ZnO diode. The diode exhibited a clear rectifying I–V characteristic with an ideality factor of ∼2 and a forward threshold voltage of ∼1 V. Although the photoresponsivity was fairly weak at the zero-bias voltage, it was enhanced up to ∼0.3 A W−1 through the application of a reverse bias of −6 V under the irradiation of 360 nm light, a value comparable to that of commercial devices.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2003
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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