In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 20, No. 12 ( 1981-12-01), p. L909-
Abstract:
A triple SOI (Silicon crystal On Insulator) structure has been fabricated on (100) and (111) Si substrates, utilizing three SIMOX (Separation by IMplanted OXygen) cycles. The SIMOX process consists of high-dose oxygen implantation followed by annealing and epitaxial growth of silicon, and provides good surface morphology. The top Si layer of the present triple SOI is single crystalline, which is confirmed by reflection electron diffraction and Rutherford backscattering measurement.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.20.L909
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1981
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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