In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4S ( 2010-04-01), p. 04DH11-
Abstract:
The structural and electrical properties of SiGe films deposited by reactive thermal chemical vapor deposition using a lamp heating system with a source gas mixture of GeF 4 and Si 2 H 6 were investigated. In the SiGe film depositions with respective GeF 4 and Si 2 H 6 flow rates of 0.06 and 3 sccm, the film structure changed from crystalline to amorphous during the film growth. The results of secondary ion mass spectroscopy analysis and high-temperature deposition suggest that the gas phase reactions cause the structural change. To suppress the gas phase reactions, low-pressure depositions are investigated. The SiGe film deposited at a relatively low pressure of 400 Pa shows good crystallinity. The thin-film transistor with this SiGe film also reveals a high p-channel mobility of about 10 cm 2 ·V -1 ·s -1 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.04DH11
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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