In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 9S ( 2000-09-01), p. 5476-
Abstract:
A Bi-Ta multi-seeding layer system is proposed to improve the ferroelectric properties of SrBi 2 Ta 2 O 9 (SBT) thin films prepared by a sol-gel method for applications to nonvolatile memories. For seeding layers composed of different ratios of Bi to Ta, three different structures were observed after heat treatment at 800°C: γ-Bi 2 O 3 , Bi 3 TaO 7 and Bi 1.4 Ta 2 O 6.75 . γ-Bi 2 O 3 with a sillenite structure exhibited a plate-like surface morphology. Bi 3 TaO 7 with a fluorite structure exhibited a flat surface morphology. Bi 1.4 Ta 2 O 6.75 with a pyrochlore structure exhibited a rough surface morphology. Because a flat surface morphology with a fluorite structure is desirable for a seeding layer, the Bi–Ta seeding layers, with a Bi to Ta ratio equal to 3 to 1, were used as multi-seeding layers. When the seeding layers were sandwiched between SBT thin films, multi-seeding layers provided, after heat treatment at 800°C, a higher degree of crystal orientation in the a - or b -axis direction than a simple SBT thin film without seeding layers. Orientation in the a - or b -axis direction is desirable for SBT thin films to obtain improved ferroelectric properties, especially high remanent polarization values. The SBT thin film with Bi–Ta multi-seeding layers was found to have higher saturation characteristics than that without seeding layers, which suggests that the former type of SBT thin film has a good potential for low-voltage operation. The multi-seeding method is thus effective for improving ferroelectric properties of SBT thin films for nonvolatile memories.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.5476
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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