In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, No. SC ( 2023-04-01), p. SC1007-
Abstract:
This study investigates the surge current capabilities of embedded Schottky barrier diodes (SBDs) in SiC SBD-integrated trench metal–oxide–semiconductor field effect transistors (MOSFETs) (SWITCH-MOSs) using titanium and nickel for the Schottky metals. The results demonstrated that a 25% enhanced surge current capability can be achieved for an embedded SBD with a higher barrier height of nickel compared to those with titanium and that it was comparable to body-PiN-diodes in a standard SiC trench MOSFET (IE-UMOSFETs). Furthermore, the study demonstrated the superior surge current capabilities of body-PiN-diodes in IE-UMOSFETs that have wide and thick Cu heat capacitance blocks attached to chip surfaces, and a significant improvement of 57% in surge current capability was achieved with 2.9 × 4.1 mm 2 wide and 0.4 mm thick Cu blocks. Notably, there was no sacrifice of I – V characteristics in the third quadrant and reverse recovery characteristics or the resistance in the first quadrant with the Cu blocks.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/aca61b
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink