In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 4S ( 2001-04-01), p. 2762-
Abstract:
Reactive ion etching (RIE) of GaN has been performed using BCl 3 and additives Ar, CH 4 , and N 2 to BCl 3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl 3 /Ar was used as the RIE plasma source with 200 W RF power and 60 mTorr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH 4 and N 2 to the BCl 3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl 3 /Ar/CH 4 /N 2 by RIE.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2762
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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