In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 12S ( 1991-12-01), p. 3818-
Abstract:
A phase-shifting mask technique using an i-line stepper was applied to the gate formation process of AlGaAs/GaAs high electron mobility transistors (HEMTs). To obtain a fine gate pattern of less than a quarter micron, the phase-shifter edge-line mask, which has the highest resolution and wide focus margin for an isolated pattern, was used and the double exposure process was developed to form a real gate pattern. The controllable gate length was in the range of 0.50-0.15 µm. By using this technique, 0.18 µm-gate HEMTs with good and uniform microwave performances in a 3-inch wafer were obtained. This technique has great advantages for applications to microwave GaAs devices and ultrahigh-speed GaAs LSIs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.3818
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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