In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 5R ( 2004-05-01), p. 2510-
Abstract:
High-brightness AlGaInP/mirror/barrier/Si light-emitting diodes (LEDs) with vertical electrodes were fabricated using a wafer bonding technique. The high-thermal-conductivity Si substrate provides a better heat sink (compared with GaP or GaAs), which is a particularly important characteristic for high-power, large-area emitter applications. It allows for saturation of the small-area LED (300×300 µm 2 ) after 150 mA injection and for the large-area LED (1200×1200 µm 2 ) to increase output power even at 300 mA injection. The light output of the large-area vertical-conducting LED is mainly affected by the top-side (i.e., n -AlGaInP cladding) electrode design, where an interdigitated-finger electrode provides the better current spreading performance and prevents the current crowding problem. The extent of junction heating on LED samples (300×300–1200×1200 µm 2 ) can also be evaluated from the corresponding electroluminescence spectra and emission-peak-wavelength driven by different injection current values. Finally, using a natural lithography technique, the mirror-substrate (MS) LEDs with textured surfaces present a brightness of 10 cd, which is about 4 cd brighter than that of the MS LED without a textured surface. With a combination of the MS wafer bonding and surface texturing techniques, thermal management in packaging becomes the key factor in further enhancing the external quantum efficiency of large-area LEDs under high flux operation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.2510
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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