In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 4S ( 2014-04-01), p. 04EF10-
Abstract:
The reduction in the gate leakage current and the improvement in subthreshold characteristics and current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) with various surface treatments were investigated. We applied wet treatment, digital etching (O 2 or N 2 O), or plasma treatment (CF 4 or SF 6 ) before SiN x passivation. Among these treatments, SF 6 plasma treatment suppressed gate leakage current, reduced subthreshold slope, and improved pulsed current–voltage ( I – V ) characteristics most effectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.04EF10
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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