In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 11R ( 1991-11-01), p. 2868-
Abstract:
Deposition of SiO 2 thin films by the ArF excimer laser photolysis of mixtures of SiH 4 and N 2 O has been studied in the low substrate temperature range of 30-400°C. The structural properties of the oxide layers were studied by FT-IR spectroscopy. The refractive index of films agreed with that of stoichiometric SiO 2 in the substrate temperature range of 150-400°C. The deposition conditions were studied as a function of the substrate temperature, the deposition time, the laser repetition rate, the total pressure, and the N 2 O/SiH 4 flow ratio. The maximum growth rate was ∼70 Å/min at a substrate temperature of 400°C, a total pressure of 2 Torr, a repetition rate of 50 Hz, and a N 2 O/SiH 4 flow ratio of ∼800.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.2868
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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