In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 1109 ( 2015-6), p. 554-558
Abstract:
Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc nitrate hexahydrate as a starting material by sol-gel immersion method. Then the synthesized samples were characterized by current-voltage (I-V) measurement and FESEM. The Sn doping concentration were varied at 0.2 at.%, 0.4 at.%, 0.6 at.%, 0.8 at.% and 1.0 at.%. The result suggests that the optimum value for Sn doping concentration was 0.8 at.% which exhibited the highest conductive sample with value of 3.00 ×10 -6 S/cm.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.1109
DOI:
10.4028/www.scientific.net/AMR.1109.554
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2015
detail.hit.zdb_id:
2265002-7
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