In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 1194-
Abstract:
In order to clarify the electron-beam (EB) patterning mechanism of GaAs photo-oxide mask layers used in “ in situ EB lithography”, the effects of surface stoichiometry and heat treatment of the photo-oxide mask layers on the patterning characteristics were studied. The threshold dose for EB patterning was shown to depend on the amounts of both oxygen and arsenic in the photo-oxide mask layers. For photo-oxide mask layers containing larger amounts of As and O, the threshold dose for EB patterning increased. Moreover, for photo-oxide mask layers heated at temperatures above 400° C, where arsenic was mostly desorbed and stable Ga oxides were thought to be dominant, the mask durability was enhanced and, as a result, EB/Cl 2 patterning became impossible. These results strongly indicate that As oxides play an essential role in EB/Cl 2 patterning of “ in situ EB lithography”.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.1194
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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