In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7B ( 2000-07-01), p. L730-
Abstract:
We report on the first successful fabrication of ramp-edge junctions with an NdBa 2 Cu 3 O y (NBCO)-based interface-modified barrier in which a YBa 2 Cu 3 O y (YBCO) film is employed as a counterelectrode. The interface-modified barrier on the NBCO ramp surface is formed by electron cyclotron resonance (ECR) ion etching and subsequent annealing treatments to the ramp surface. By annealing at a slightly higher temperature than that for a YBCO-based interface-modified barrier just before counterelectrode growth, resistively shunted junction type current–voltage ( I – V ) characteristics with the I c R n product at 4.2 K of approximately 1.6 mV are obtained. These results suggest that NBCO as well as YBCO can be used in high-quality ramp-edge
junctions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L730
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink