In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 11B ( 1994-11-01), p. L1634-
Abstract:
We have investigated the accumulation of InGaAs dots ( ∼15 nm) on GaAs and AlGaAs surfaces, by metalorganic chemical vapor deposition (MOCVD). Scanning electron micrography (SEM) shows highly uniform dots formed by the Stranski-Krastanow growth mode. The average area InGaAs dot density can be controlled from 10 8 cm -2 up to more than 10 11 cm -2 by substrate off-angle orientation, deposition thickness, and growth temperature. The results indicate high area dot density for low surface diffusion.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L1634
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink