In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10R ( 1993-10-01), p. 4703-
Abstract:
Nitrogen-doped (N-doped) p-type ZnTe films have been prepared on GaAs(100) substrates by hot wall epitaxy (HWE) for the first time. To obtain high-quality films with high hole concentrations, optimum growth conditions such as the substrate temperature and the growth rate were studied by X-ray and Photoluminescence (PL) measurements. The hole concentration and Hall mobility were 1.1×10 17 cm -3 and 52 cm 2 V -1 s -1 , respectively. The PL spectra of these films had a excitonic emission ( I 1 ), indicating high crystalline quality. The activation energy of the nitrogen acceptor was calculated, for the first time, to be 51 meV from the donor-acceptor (DA) emission energy. The existence of nitrogen in the films was confirmed by secondary ion mass spectroscopy (SIMS). The N-doped ZnTe-ZnSe SL's were also prepared and the hole concentration and Hall mobility were 2.3×10 18 cm -3 and 36 cm 2 V -1 s -1 , respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4703
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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