In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1410-
Abstract:
Room-temperature operation of a ZnSe-active-layer double-heterostructure laser diode (LD) was observed. The lasing wavelength was 471 nm. The emission energy shift with increasing current is explained by band filling and band-gap shrinkage. The threshold carrier density is calculated to be 4×10 18 cm -3 . We conclude that the dominant lasing mechanism of II–VI double heterostructure laser diodes is the recombination of electron-hole plasma. It is also the dominant mechanism in ZnCdSe quantum-well separate-confinement-heterostructure laser diodes. In both types of LD's, the band-gap shrinkage was observed near the threshold.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.1410
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink