In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 5R ( 2004-05-01), p. 2438-
Abstract:
This paper presents the electrical characteristics of trigate silicon-on-insulator (SOI) n-type metal–oxide–silicon field-effect transistor (n-MOSFET) devices with a gate length of 50 nm, a channel width of 100 nm, and a channel thickness of 30 nm. The source and drain of these trigate SOI n-MOSFETs were formed by ion-shower doping at 250°C. In particular, activation annealing after ion-shower doping was excluded in order to improve the lateral steepness of the source/drain junction. Without any additional thermal processes, a low sheet resistance ( R s ) of 1.2 kΩ/□ was obtained by ion-shower doping, and trigate MOSFETs showed satisfactory electrical characteristics. Since the short-channel effect was suppressed and the ratio of maximum drain current to minimum drain current ( I max / I min ) as ∼10 5 , it is thought that the ion-shower doping process is effective for fabricating short-channel trigate SOI MOSFET devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.2438
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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