In:
Applied Physics Letters, AIP Publishing, Vol. 88, No. 11 ( 2006-03-13)
Abstract:
We fabricate field-effect transistors (FETs) based on C60 nanowhiskers (C60 NWs) and investigate their structural and electrical properties. Thermally annealed C60 NWs show x-ray powder-diffraction spectra that are consistent with a similar fcc structure to that of C60 bulk crystals, although with a slightly reduced lattice constant (a=13.9Å). The C60 NW-FETs exhibit n-channel, normally-on, properties (or FETs) and their carrier mobility is estimated to be 2×10−2cm2∕Vs under vacuum conditions at room temperature.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink