In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 4A ( 1992-04-01), p. L376-
Abstract:
We report for the first time highly resistive iron-doped AlInAs layers grown by metalorganic chemical vapor deposition (MOCVD) using a popular iron doping source, (C 5 H 5 ) 2 Fe. The linear relationship between Fe atom concentration of Fe-doped AlInAs layers, which was measured by SIMS analysis, and (C 5 H 5 ) 2 Fe flow rate was obtained. To evaluate the effect of Fe doping quantitatively, samples of Si-doped n-AlInAs layers were prepared. The relation between carrier concentration and Fe atom concentration of the layers suggested that one Fe atom killed one carrier of n-type AlInAs. An Fe-doped AlInAs layer, with undoped AlInAs layers, which had a residual carrier concentration of 1∼2×10 15 cm -3 , showed highly resistive characteristics. We found a deep trap with an activation energy of 0.7 eV using photoexcited DLTS, which may cause compensation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.L376
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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