In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 581 ( 1999)
Abstract:
TiC and Ti-W-C films have been produced by chemical vapor deposition (CVD). A fractional factorial design was used to study the effects of deposition temperature, C:Ti input, H:Ti input, reactor pressure, and total mass flow on TiC film composition. Statistical models were developed for both titanium at.% and C:Ti in the film. It was found that the most significant affect on titanium at.% was the interaction of temperature, pressure and total mass flow. The most important affect on the C:Ti in the deposited film was the interaction C:Ti input, H:Ti, and total mass flow. Ti-W-C films have been deposited at 1050°C at various (TiCl 4 +W(CO) 6 )/CH 4 inlet ratios ranging from 0.53 to 1.01. The characterization of the films revealed that the changes in deposition rate, crystallinity, film orientation, and morphology of various Ti-W-C compositions were affected by (TiCl 4 +W(CO) 6 )/CH 4 inlet ratios.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-581-339
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1999
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