In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 5R ( 1996-05-01), p. 2590-
Abstract:
Fluorine (F) ions which deduced from tungsten-polycide (W-polycide) formation and affected on metal-oxide-semiconductor (MOS) devices with pure oxide, oxynitride (NO) and re-oxidized oxynitride (ONO) gate dielectric under high field stress were investigated in detail. Although a significant amount of interface states were detected by charge pumping technique in NO and ONO device with W-polycide gate in comparison with that devices with polysilicon gate, however, it is found that NO, and especially ONO gate dielectric, can effectively improve the hot-carrier degradation in W-polycide gated MOS field-effect transistor (FET). This mechanism is well interpreted with a model about F ions increasing the nitrogen concentration at the interface between gate dielectric and Si substrate according to the result of secondary ion mass spectrometry (SIMS) analysis.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.2590
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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