In:
Applied Physics Letters, AIP Publishing, Vol. 90, No. 2 ( 2007-01-08)
Abstract:
Bent aluminum nanowires are produced by heating equimolar mixture of aluminum and silicon, and bending is due to Al–Si formation. Calculation reveals that incorporation of Si into metal lattice induces cell stress, leading to nanowire growth deviation. An energy barrier is established at nanowire bends, similar to junction devices.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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