In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 2B ( 2001-02-01), p. L144-
Abstract:
A novel simulation algorithm to investigate the 2-D valence hole quantization effect within the inversion layer of a metal-oxide-semiconductor (MOS) structure is illustrated. A 6×6 hole Hamiltonian for a superlattice with a zigzag electric potential is introduced. The method involves the accurate band mixing of the valence bands, as well as simple and highly efficient computation. Mixing of the heavy, light and split-off hole bands is expected as a result of the symmetry property of the Hamiltonian. Due to band mixing, the energy dispersion, density of states, and charge distribution exhibit very different behaviors than those derived by the one-band effective-mass approximation. The impact on the electrical characteristics of MOS devices is demonstrated by an example of the threshold voltage shift. The results are in good agreement with those of the reported experiments.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L144
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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