In:
Applied Physics Letters, AIP Publishing, Vol. 67, No. 23 ( 1995-12-04), p. 3477-3479
Abstract:
The radiation effect on the n-channel polycrystalline silicon (polysilicon) thin-film transistors has been investigated. It is found that for an unhydrogenated device, the irradiation of Co60 with a total dose of 1 Mrads caused a negative threshold-voltage (Vth) shift and a slight subthreshold-swing (S) degradation, while for a hydrogenated n-channel device, the same irradiation results in a positive Vth shift and a serious S degradation. It is also found that the radiation hardness of the hydrogenated devices can be improved somewhat by a simple irradiation-then-hydrogenation treatment.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1995
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink