In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 12S ( 1992-12-01), p. 4454-
Abstract:
Photoelectron current by an irradiation of broadband synchrotron radiation (SR) is evaluated experimentally and theoretically for silicon dioxide (SiO 2 ) film on silicon. The SiO 2 film is known to be evaporated during SR irradiation at elevated temperatures. It is found that the photoemitted current from SiO 2 film on Si shows a characteristic change during SR-excited SiO 2 evaporation. At the final stage of SiO 2 evaporation, where the residual thickness decreases to less than 5 nm, the photoemitted current starts to decrease. By theoretical calculation, the decrease in photoemitted current at the end of SiO 2 evaporation is attributed mainly to the decrease in the absorption of photons by O 2p electrons. It is shown that the photoelectron current is surface sensitive and the measurement of the current is a convenient approach for in-situ monitoring of the photoexcited surface reactions such as the end-point detection of SR-excited SiO 2 etching.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.4454
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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