In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 58, No. 6 ( 2019-06-01), p. 068003-
Abstract:
We perform a numerical analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped buffer layer with only a deep acceptor as a deep level and study how its density N DA and the length of field-plate L FP affect the breakdown voltage V br . The calculated characteristics usually show abrupt increases in gate and drain currents due to impact ionization, resulting in breakdown. But, in some cases, V br is limited by current flow through the buffer, and this current is higher for lower N DA . Therefore, V br becomes higher for higher N DA . V br takes a maximum value at some L FP , and the highest average electric field between gate and drain becomes about 3.2 MV cm −1 when the breakdown occurs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/1347-4065/ab1e8f
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2019
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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