In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 7S ( 1997-07-01), p. 4588-
Abstract:
For plasma-assisted processing of future semiconductor devices, a new compact microwave plasma source has been specifically designed. The source is versatile in that plasma production is possible over a wide pressure range. Measured plasma parameters include electron densities in excess of 10 11 cm -3 and low plasma potential ( 〈 10 V). Plasma chemistry was investigated by emission spectroscopy and the main excited species found was atomic oxygen radicals. In determining the absolute density of radical species, titration using NO 2 gas was employed to correlate the oxygen atom density with the plasma operating conditions. At a microwave power of 300 W and a O 2 partial pressure of 16.6 Pa oxygen atom densities in excess of 1.9×10 15 cm -3 have been measured, which gives dissociation rates of O 2 of approximately 20%. Effects of wall materials on the oxygen atom density were also investigated. Using a Teflon liner at high pressures provides a 37% increase in oxygen atom density due the lower recombination coefficient of Teflon compared to stainless steel.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4588
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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