In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 8R ( 2010-08-01), p. 080201-
Abstract:
The effects of fabrication processes on the electrical properties of Al 2 O 3 /GaN structures prepared by atomic layer deposition were investigated. The annealing process at 800 °C for the formation of ohmic electrodes brought a large number of microcrystallization regions into the Al 2 O 3 layer, causing a marked leakage in the current–voltage characteristics of the Al 2 O 3 /GaN structure. The “ohmic-first” process with a SiN protection layer was thus applied to the GaN surface. In this process, the amorphous phase in the atomic configuration of Al 2 O 3 was maintained, leading to the sufficient suppression of leakage current at the Al 2 O 3 /GaN interface. In addition, the Al 2 O 3 /GaN structures showed good capacitance–voltage characteristics, resulting in low interface state densities of less than 1×10 12 cm -2 eV -1 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.080201
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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