In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 3B ( 2001-03-01), p. L245-
Abstract:
N-type GaN layers doped with Si are grown on sapphire substrates with AlN buffer layers by the metalorganic chemical vapor deposition method. The electron density is 2×10 17 cm -3 . The GaN surface is treated with hydrogen (H 2 ) plasma produced by supplying microwave power. Etching of GaN with H 2 plasma leads to the formation of a roughened GaN surface. An enhancement of the electric field at the roughened surface makes it possible to reduce the average electric field between the anode electrode and the sample surface for electron emission. The turn-on electric field for the electron emission is estimated to be as low as 12.4 V/µm.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L245
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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