In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12A ( 1998-12-01), p. L1430-
Abstract:
In situ observations of melting silicon have been carried out using an ultrahigh-voltage
electron microscope, and lattice defects induced by rapid cooling from a partly molten state are examined in detail by conventional transmission electron microscopy. Stacking fault
tetrahedra are found to form, indicating that the clustering and the collapse of thermal vacancies take place on the {111} planes at high temperatures. Their formation mechanism is discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L1430
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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