In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 29, No. 3 ( 2011-05-01)
Abstract:
The effect of growth temperature on a-plane ZnO formation on r-plane sapphire has been systematically investigated by employing in situ high pressure reflection high-energy electron diffraction, atomic force microscopy, and high-resolution x-ray diffraction. For film growth above and below 600 °C, it is shown that there is a significant difference in growth rate and surface morphology due to the differences in the growth mode. Stripelike morphologies were observed on the surface of a-plane ZnO grown at low temperature (LT) because of differences in the growth rate along the c-axis and the growth rate normal to the c-axis. Furthermore, annealing of films grown at low temperature results in more pronounced stripe morphology and in improvement of crystallinity.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2011
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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