In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 3 ( 2004-05-01), p. 961-965
Abstract:
In this article, we report on the growth of 1.3-μm-compressive-strain GaInAsP/InP multiple-quantum-well laser diodes (CS-MQW LDs) with a tensile-strain GaInP quantum barrier (GaInP-QB) in the separate-confinement-heterostructure (SCH) regions. Observed via the photoluminescence (PL) spectra, the optimum Ga composition of GaxIn1−xP-QB, GaInP-QB thickness, and pair number of the GaxIn1−xP-QB are 0.09, 5 nm thick and one pair, respectively. The optimum GaInP-QB structure in the p-side SCH region exhibits the narrowest PL full width at half maximum of 43.1 meV, the lowest threshold current of 23 mA, and the highest characteristic temperature of 52 K for the as-cleaved LDs with a 600-μm-cavity length and a 3.5-μm-wide ridge stripe. This low threshold current is better than that of the LDs with GaInP-QB in the n-side SCH region and that of the conventional LDs without GaInP-QB.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2004
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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