In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12R ( 1996-12-01), p. 6003-
Abstract:
In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metal-oxide-semiconductor field-effect transistor (MOSFET) with the p + -poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N 2 O oxide exhibited a better retarding of the boron diffusion as compared with the O 2 oxide. It was found that a combination of stacked amorphous silicon with N 2 O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and D it of this sample are superior to all the other samples.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.6003
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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