In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 12S ( 1991-12-01), p. 3627-
Abstract:
BF 2 + ions at 30 keV were implanted into silicon wafers held at -100°C or room temperature. The recrystallization process of the implanted wafers was examined by Rutherford backscattering (RBS) and Raman scattering. The value of χ min for wafers implanted at -100°C and annealed at 600°C is 0.05, close to that of crystalline Si, while it is 0.08 for the room-temperature implantation. The Raman spectrum for the case of low-temperature implantation also exhibits a smaller amount of residual defects than that for the room-temperature implantation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.3627
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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