In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 1A ( 2000-01-01), p. L9-
Abstract:
The Fe-based III-V diluted magnetic semiconductor (III-V-DMS), (Ga, Fe)As, has been
grown successfully on GaAs(001) substrates by molecular beam epitaxy at a substrate temperature T s ranging from 260–350°C. Secondary ion mass spectroscopy analysis has
exhibited that the film composition can be expressed by Ga 1- x Fe x As. X-ray diffraction data
have indicated that the lattice constant of Ga 1- x Fe x As decreases with increasing Fe composition.
Magnetization data have exhibited that epilayers are predominantly paramagnetic, however, their detailed behavior differs from that of Mn-based DMS systems. The work has
demonstrated that the physical properties of III-V-DMS can be changed significantly by the choice of transition metals.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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