In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 8A ( 1998-08-01), p. L916-
Abstract:
The electroreflectance (ER) spectrum of the CdS/CdTe thin-film
solar cell has been studied in conjunction with the results on the atomic element depth profile. The ER spectrum occurs with three
spectral components with optical transition energies of 1.44 eV, 1.47 eV and 1.49 eV at 293 K. The mixed crystal layer of CdTe 1- x S x ,
∼2 µm thick ( x 〉 0.004), extends from the CdS/CdTe metallurgical interface
into the CdTe layer, and the n – p junction locates in the mixed crystal layer. The
dominant 1.47-eV ER component is assigned to the band gap of the mixed crystal layer of CdTe 0.95 S 0.05 at around the n – p junction.@keyword
CdTe 1- x S x , CdS/CdTe solar cell, mixed crystal, electroreflectance, SIMS, n – p junction
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L916
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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