In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 25, No. 9R ( 1986-09-01), p. 1312-
Abstract:
Microcrystalline (µc-) grains of Ge 1- y Sn y (0.1 〈 y 〈 0.4) were precipitated by thermal treatments of amorphous films of a Ge 1- x Sn x ( x 〈 0.4) alloy deposited by co-sputtering. At higher temperatures grains of β-Sn came out, co-existing with those of µc-Ge 1- y Sn y . Mössbauer spectroscopy was used to characterize states of Sn in a Ge-Sn alloy film. Optical properties, such as the real part ε 1 of the complex dielectric constant for Ge 0.65 Sn 0.35 , also changed as the structure change, especially at a photon energy of 1.6∼1.8 eV, where ε 1 took a maximum. It was suggested that an amorphous Ge-Sn alloy might be a good material for archival-type optical storage.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.25.1312
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1986
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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