In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 10R ( 2005-10-01), p. 7395-
Abstract:
Chemical bonding states and depth profiles of nitrogen in radical nitrided silicon oxide film formed in Ar/N 2 plasma excited by microwave has been investigated using X-ray photoelectron spectroscopy with HF step etching. The main chemical bonding state of nitrogen atom is Si 3 ≡N configuration, and the other unknown bonding state (termed N high ) is observed, whose peak energy shift is about +4.8 eV. The nitrogen atoms forming Si 3 ≡N configuration accumulate only at the film surface and those forming N high configuration are distributed deeper in the films. The N high bond is very weak because it is desorbed completely at low temperature (300–500°C). Although the nitrogen atoms forming N high configuration are removed by post O 2 -annealing, those forming Si 3 ≡N configuration migrate toward the film/substrate interface and they increase negative bias temperature instability. In the case of ultra thin film, nitriding species forming N high bond reach the film/substrate interface and form Si 3 ≡N bond at the interface. Suppression of the generation of nitriding species forming N high bond in the plasma is very important. It is clear that N high bond is reduced using Ar/NH 3 plasma.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.7395
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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