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  • 1
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-01, No. 45 ( 2014-04-01), p. 1703-1703
    Abstract: Free radicals (FR) can be formed inside cells as a result of physiological processes such as food metabolism, respiration or pollutants generated by effects such as snuff radiation, among others. Its accumulation can be harmful to nearby cells or in contact with a tissue or organ [ [i] ] . It is for this reason that various investigations have focused their interest to the detection and quantification of these FR, in order to find materials that enable in-vivo sensing these FR and in particular the hydroxyl radical (OH), because of its high oxidation potential +2.32 V [ [ii] ]. In this study we examined the changes on the surface properties of crystalline silicon (n -Si) and porous silicon (n-PS) as a function of exposition time to hydroxyl radicals generated by Fenton reaction and by means of the reaction between hydrogen peroxide electrochemically generated with iron (II) ions (electrofenton). Morphological, optical and wetting degree characterizations were performed for the evaluation of changes on the surface properties of these substrates. For morphological analysis, Atomic Force Microscope (AFM) was employed, evaluating pore size distribution on n-PS and y¡the influence of the exposition to FR. Changes in optical properties were analyzed by means of photoluminescence (PL) of n-PS exposed at OH radical at different periods and analyzing changes on the intensity of this signal. Finally, the wetting degree was analyzed by contact angles in two stages: (i) sessile drop method ( ex- situ ); (ii) captive bubble method ( in- situ ). The results obtained indicate a change in the silicon hydrophobicity/hydrophilicity as a function of exposition time to OH radicals. These changes have been associated with the dynamic surface transformation of silicon surface groups from Si - H (after cleaning treatment ) to Si - OH (after exposure to hydroxyl radical). [[i] ] Robert E. Huie and P. Neta. Chemistry of reactive oxygen species Part I. Kluwer academic publishers, (2002) New York, 33 -63pp. [[ii] ] Fritz Scholz, Gabriela López de Lara González, Leandro Machado de Carvalho, Mauricio Hilgemann, Khenia Z. Brainina, Heike Kahlert, Robert Smail Jack, and Dang Truong Minh. Angewandtechemie international edition. 46 , (2007) 8079 –8081.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
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  • 2
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-02, No. 23 ( 2014-08-05), p. 1367-1367
    Abstract: Several studies have emerged in an attempt to explain the aging process which occurs in the human body, where free radicals (FR) are species involved in these alterations. Considering this subject, there is a great interest in being able to detect, quantify and control the amount of FR that human body produces at certain periods, and especially the hydroxyl radical (OH) [[i] , [ii] ]. In this study we examined the changes in the surface activity of n-Si after its exposition to a solution containing hydroxyl radicals. Changes in the surface activity caused by the interaction between silicon and OH radicals were characterized by analyzing the nucleation and growth mechanism (NGM) of copper on silicon electrodes. For this aim, we studied the copper deposition on: i) n-Si without exposure to hydroxyl radicals and ii) n-Si exposes at different periods of time to hydroxyl radical. It was observed a change in the copper NGM on n-Si, from 3D progressive nucleation diffusion-controlled growth (PN3D DIFF ), for the system without exposure to the OH radical, toward 3D instantaneous nucleation diffusion-controlled growth (IN3D DIFF ), when the semiconductor substrate was exposed to the OH radicals. In both cases analysis by the Atomic Force Microscopy (AFM) technique was performed confirming these mechanisms. [[i] ] Tomasz Rapecki, Anna M. Nowicka, Mikolaj Donten, Fritz Scholz, Zbigniew Stojek, Electrochem. Commun. 12, (2010), 1531-1534. [[ii] ] Anna Maria Nowicka, Ulrich Hasse, Mikolaj Donten, Michael Hermes, Zbigniew Jan Stojek, Fritz Scholz, J Solid State Electrochem., 15 , (2011), 2141–2147.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    detail.hit.zdb_id: 2438749-6
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  • 3
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-02, No. 24 ( 2014-08-05), p. 1409-1409
    Abstract: Free radicals (FR) can be formed inside cells as a result of physiological processes such as food metabolism, respiration or pollutants generated by effects such as snuff radiation, among others. Its accumulation can be harmful to nearby cells or in contact with a tissue or organ [ [i] ] . It is for this reason that various investigations have focused their interest to the detection and quantification of these FR, in order to find materials that enable in-vivo sensing these FR and in particular the hydroxyl radical (OH), because of its high oxidation potential +2.32 V [ [ii] ]. In this study we examined the changes on the surface properties of crystalline silicon (n -Si) and porous silicon (n-PS) as a function of exposition time to hydroxyl radicals generated by Fenton reaction and by means of the reaction between hydrogen peroxide electrochemically generated with iron (II) ions (electrofenton). Morphological, optical and wetting degree characterizations were performed for the evaluation of changes on the surface properties of these substrates. For morphological analysis, Atomic Force Microscope (AFM) was employed, evaluating pore size distribution on n-PS and y¡the influence of the exposition to FR. Changes in optical properties were analyzed by means of photoluminescence (PL) of n-PS exposed at OH radical at different periods and analyzing changes on the intensity of this signal. Finally, the wetting degree was analyzed by contact angles in two stages: (i) sessile drop method ( ex- situ ); (ii) captive bubble method ( in- situ ). The results obtained indicate a change in the silicon hydrophobicity/hydrophilicity as a function of exposition time to OH radicals. These changes have been associated with the dynamic surface transformation of silicon surface groups from Si - H (after cleaning treatment ) to Si - OH (after exposure to hydroxyl radical). [[i] ] Robert E. Huie and P. Neta. Chemistry of reactive oxygen species Part I. Kluwer academic publishers, (2002) New York, 33 -63pp. [[ii] ] Fritz Scholz, Gabriela López de Lara González, Leandro Machado de Carvalho, Mauricio Hilgemann, Khenia Z. Brainina, Heike Kahlert, Robert Smail Jack, and Dang Truong Minh. Angewandtechemie international edition. 46 , (2007) 8079 –8081.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    detail.hit.zdb_id: 2438749-6
    Location Call Number Limitation Availability
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  • 4
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-01, No. 45 ( 2014-04-01), p. 1704-1704
    Abstract: Several studies have emerged in an attempt to explain the aging process which occurs in the human body, where free radicals (FR) are species involved in these alterations. Considering this subject, there is a great interest in being able to detect, quantify and control the amount of FR that human body produces at certain periods, and especially the hydroxyl radical (OH) [i , ii ]. In this study we examined the changes in the surface activity of n-Si after its exposition to a solution containing hydroxyl radicals. Changes in the surface activity caused by the interaction between silicon and OH radicals were characterized by analyzing the nucleation and growth mechanism (NGM) of copper on silicon electrodes. For this aim, we studied the copper deposition on: i) n-Si without exposure to hydroxyl radicals and ii) n-Si exposes at different periods of time to hydroxyl radical. It was observed a change in the copper NGM on n-Si, from 3D progressive nucleation diffusion-controlled growth (PN3D DIFF ), for the system without exposure to the OH radical, toward 3D instantaneous nucleation diffusion-controlled growth (IN3D DIFF ), when the semiconductor substrate was exposed to the OH radicals. In both cases analysis by the Atomic Force Microscopy (AFM) technique was performed confirming these mechanisms. [i ] Tomasz Rapecki, Anna M. Nowicka, Mikolaj Donten, Fritz Scholz, Zbigniew Stojek, Electrochem. Commun. 12, (2010), 1531-1534. [ii ] Anna Maria Nowicka, Ulrich Hasse, Mikolaj Donten, Michael Hermes, Zbigniew Jan Stojek, Fritz Scholz, J Solid State Electrochem., 15 , (2011), 2141–2147.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    detail.hit.zdb_id: 2438749-6
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  • 5
    Online Resource
    Online Resource
    The Electrochemical Society ; 2017
    In:  ECS Meeting Abstracts Vol. MA2017-02, No. 49 ( 2017-09-01), p. 2112-2112
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2017-02, No. 49 ( 2017-09-01), p. 2112-2112
    Abstract: The electrochemical determination of glucose concentration through the use of a non-enzymatic system is a priority purposes in recent decades. For this reason, many researchers have focused their studies on the development of sensors of this nature. For this purpose, they have proposed the use of new materials such as metals and metal oxides. In this context, we conducted a study of the synthesis and characterization of the electrical and morphological properties of nickel oxide (II) type - p (p-NiO), all this in order to evaluate it as a possible nonenzymatic sensor glucose molecule. Despite the above, the nickel oxide has a low diffusion rate of charge carriers. Therefore, new synthesis routes leading to a nanostructured oxide is required, so that the photogenerated electrons are accumulated in the vicinity of the surface. This is to facilitate the transfer process of charge per on the recombination. This report shows the results concerning the preparation sonoelectrochemical of NiO nanostructures (NN). Nanostructured NiO layers have been electrochemically grown by ultrasound-assisted anodization of nickel foils (Advent, 99.0%, 0.1 mm) at a potential of 50 V in ethylene glycol (EG; 99.8%, anhydrous), ammonium fluoride (0.5 wt% NH 4 F) and wt 5.0% DI water. The anodization experiments were carried out using ultrasonic waves (37 kHz, 60 W) and were carried out for 300 s at different temperatures. The above process was carried out using a two-electrode system (flag shaped 1.0 cm 2 Ni foil as anode and carbon plate, 22.55 cm 2 as cathode; the distance between cathode and anode was kept at 3 cm). Two different nickel substrates have been assayed, i.e.: (i) bare nickel foils, and pre-treated nickel substrates by anodic polarization for 2 hours in a 0.1 M KX (X = F - o Cl - ) in aqueous solution at -0.18 V. The resulting NiO nanostructures (NN) will then be named as: NN(w/o) and NN (−0.18 V), respectively. The electrochemical pretreatment process of nickel substrates was carried out using a conventional electrochemical cell with a three-electrode arrangement. As a reference electrode, an Hg/Hg 2 SO 4 (SME, 0.650 V vs. NHE) has been used, and a platinum spiral and a nickel sheet of 1.0 cm 2 constituted the counter and working electrode, respectively. The anodized samples are properly washed with distilled water, to remove the occluded ions, and dried in a furnace. Moreover, nanostructured NiO layers obtained were analyzed morphologically by atomic force microscopy ( AFM ), Scanning Electron Microscopy ( SEM ) and Electrochemical Impedance Spectroscopy ( EIS ). The results obtained for nickel oxide as a non-enzymatic glucose sensor are preliminary and are being analyzed by authors.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2017
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  • 6
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2017-02, No. 42 ( 2017-09-01), p. 1892-1892
    Abstract: The quasi-unidimensional (Q1D) nanostructured semiconductors materials have certain advantages, such as, have a higher surface area/volume ratio [1-3], better crystallinity and present a decrease of the recombination process, due to the less distance that the photogenerated charge carriers must travel to attain the interface [4] . Thus, these nanomaterials are being applied in photovoltaic and photoelectrochemical devices. One of these cases is the manufacture of nanostructures for energy storage and production of fuels with a high relation between produced energy/CO 2 emissions. An example of the latter is hydrogen production from water splitting. In normal water electrolysis process, i.e. with platinum electrodes, a bias potential of approximately 1.2 V is required. This value is equivalent to 463.2 kJ / mol H 2 , for a current value of 0.03 mAcm -2 . For this reason, devices are required that reduce the energy consumption, in this way the metallic oxides semiconductors appear as good candidates. Among them, iron (III) oxide (n-Fe 2 O 3 ) and copper (I) oxide (p-Cu 2 O) can be highlighted. These oxides have band gap values of 2.0 eV and 2.1 eV, respectively. Therefore, they can cover a wide area of the solar spectrum.  On the other hand, ultrasound irradiation coupled with chemical methods had shown to be a convenient way for manipulate the size and shape of nanostructured materials (Q1D structures like nanowires, nanoneedles, nanorods, nanobelts and nanotubes). These techniques are called Sonochemical and Sonoelectrochemical. In this work the p-Cu 2 O were prepared by ultrasound-assisted anodization of copper foils (Merck, 99.7%, 0.1 mm) at two different potential values (75 V and 100 V) in ethylene glycol (EG; 99.8%, anhydrous), 5wt% and 10wt% of H 2 O, 0.5wt% NH 4 Cl and 75°C. The anodizations were carried out using ultrasonic waves (37 kHz, 60 W) and for 720 s 〈 t 〈 900 s. The above process was carried out using a two electrode system: flag shaped 1.0 cm 2 Cu foil as anode and carbon plate, 22.55 cm 2 as cathode; the distance between cathode and anode was kept at 3 cm. The anodized samples are properly washed with distilled water and dried with Argon flow. Synthesis of n-Fe 2 O 3 was performed following the methodology previously published by R. Schrebler et al [5]. Preliminary result obtained with Fe|nanotubes n-Fe 2 O 3 |0.05 M Na 2 SO 4 (pH 10)|nanostructures p-Cu 2 O|Cu system, under illumination conditions of both photoelectrodes, requires a bias potential of ~ 0.200 V. This value equals 77.3 kJ / mol H 2 , for the same current density condition as in the previous case. Therefore, a decrease in the energy cost by using photoelectrochemical cells to obtain H 2 from the splitting of the water from an aqueous alkaline solution is evidenced. Acknowledgment The financial support of Fondecyt-Chile (Project N° 1140963) and DI-PUCV (Projects N° 125.789/2014) is gratefully acknowledged by the authors. References R. Vijaya Kumar, R. Elgamiel, Y. Diamant, A. Gedanken, Langmuir, 17 (2001) 1406. V. Sáez, T.J. Mason, Molecules, 14 (2009) 4284. Bisquert, Phys. Chem. Chem. Phys., 10 (2008) 49. T. Zhang, Z.U. Rahman, N. Wei, Y. Liu, J. Liang, and D. Wang, Nano Res., 10 (2017) 1021. R. Schrebler, L.A. Ballesteros, H. Gómez, P. Grez, R. Córdova, E. Muñoz, R. Schrebler, J.R. Ramos-Barrado, and E.A. Dalchiele, J. Electrochem. Soc., 161 (2014) H903.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2017
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  • 7
    Online Resource
    Online Resource
    The Electrochemical Society ; 2014
    In:  ECS Meeting Abstracts Vol. MA2014-02, No. 23 ( 2014-08-05), p. 1368-1368
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-02, No. 23 ( 2014-08-05), p. 1368-1368
    Abstract: Semiconductor materials offer electronic properties that make them promising for being employed in the molecules detection in different environments. The present study proposes the analysis of changes in electrochemical responses of crystalline silicon (n–Si) after the interaction with hydroxyl radicals (•OH) in aqueous media. In a first stage, the synthesis of hydroxyl radicals was done by means two procedures: (i) Fenton reaction and (ii) H2O2 photochemical decomposition using a UV digester for this purpose. Variables in these processes were time and hydrogen peroxide concentration in order to determine the dependence of these parameters on silicon–hydroxyl radical interaction. After each immersion in radicals (separately both methods •OH of generation), it was performed a chemical cleaning treatment on silicon, which consisted: i) without further treatment; ii) HCl treatment or iii) HF treatment. This last was done to avoid the presence of silicon oxide (SiO2) on the semiconductor surface. Subsequently, n–Si was placed in a three electrodes cell: silicon as working electrode, Ag / AgCl, KCl (saturated) as a reference electrode (0.197 V vs SHE) and a platinum counter electrode. After were registered the corresponding voltammograms in a potassium chloride (KCl 0.1 M) solution at different pH values. In order to study the pH dependence on the interaction between substrate – reactive species (Si – •OH) were analyzed the current and the peak potential shift for each experimental conditions. Finally, Atomic Force Microscopy (AFM) was done to observe morphological changes in the substrate surface.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    detail.hit.zdb_id: 2438749-6
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  • 8
    Online Resource
    Online Resource
    The Electrochemical Society ; 2014
    In:  ECS Meeting Abstracts Vol. MA2014-01, No. 45 ( 2014-04-01), p. 1705-1705
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-01, No. 45 ( 2014-04-01), p. 1705-1705
    Abstract: Semiconductor materials offer electronic properties that make them promising for being employed in the molecules detection in different environments. The present study proposes the analysis of changes in electrochemical responses of crystalline silicon (n–Si) after the interaction with hydroxyl radicals (•OH) in aqueous media. In a first stage, the synthesis of hydroxyl radicals was done by means two procedures: (i) Fenton reaction and (ii) H 2 O 2 photochemical decomposition using a UV digester for this purpose. Variables in these processes were time and hydrogen peroxide concentration in order to determine the dependence of these parameters on silicon–hydroxyl radical interaction. After each immersion in radicals (separately both methods •OH of generation), it was performed a chemical cleaning treatment on silicon, which consisted: i) without further treatment; ii) HCl treatment or iii) HF treatment. This last was done to avoid the presence of silicon oxide (SiO 2 ) on the semiconductor surface. Subsequently, n–Si was placed in a three electrodes cell: silicon as working electrode, Ag / AgCl, KCl (saturated) as a reference electrode (0.197 V vs SHE) and a platinum counter electrode. After were registered the corresponding voltammograms in a potassium chloride (KCl 0.1 M) solution at different pH values. In order to study the pH dependence on the interaction between substrate – reactive species (Si – •OH) were analyzed the current and the peak potential shift for each experimental conditions. Finally, Atomic Force Microscopy (AFM) was done to observe morphological changes in the substrate surface.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    detail.hit.zdb_id: 2438749-6
    Location Call Number Limitation Availability
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