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  • 1
    Online Resource
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    Book reviews
    Informa UK Limited ; 1982
    In:  The Journal of Imperial and Commonwealth History Vol. 10, No. 2 ( 1982-01), p. 216-250
    Details
    In: The Journal of Imperial and Commonwealth History, Informa UK Limited, Vol. 10, No. 2 ( 1982-01), p. 216-250
    Type of Medium: Online Resource
    ISSN: 0308-6534 , 1743-9329
    URL: Article
    DOI: 10.1080/03086538208582617
    Language: English
    Publisher: Informa UK Limited
    Publication Date: 1982
    detail.hit.zdb_id: 2114288-9
    detail.hit.zdb_id: 184548-2
    SSG: 7,25
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  • 2
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    Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors
    American Vacuum Society ; 1987
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 5, No. 3 ( 1987-05-01), p. 785-791
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 5, No. 3 ( 1987-05-01), p. 785-791
    Abstract: Defect free strained layer epitaxy opens possibilities for further improvement on the quantum well two-dimensional electron gas (TEG) structures grown using the GaInAs/AlInAs on InP materials system. Increased freedom with composition allows for optimizing certain properties of the structure, such as, the conduction edge discontinuity which controls the maximum sheet concentration (ns); and the electron effective mass which influences the speed of the structure. These enhancements can be made, respectively, by increasing the Al concentration in the AlInAs and/or by decreasing the Ga concentration in the GaInAs. The maximum amount of strain which can be incorporated into the unrelaxed material sets an upper limit on the compositional tolerances. The tolerances will be shown to be large for the AlInAs and the active TEG GaInAs region. The compositions are obtained using the intensity oscillations observed in the reflective high-energy electron diffraction (RHEED) specular beam during growth of GaAs, AlAs, and subsequently GaInAs and AlInAs on GaAs. X-ray rocking curves and photoluminescence (PL) are used to verify the calibrations for growths on InP. The dependency of the mobility on strain is shown. The maximum 300 K mobility obtained was 12 360 cm2/V s, with ns of 1.25×1012/cm2. The well thickness was 84 nm. The AlInAs and GaInAs were estimated to be +0.04 and +0.17 In mole fraction from lattice match, respectively. A mobility of 11 550 cm2/V s was obtained using a 34-nm well. InAs/GaAs superlattice quantum well TEG structures were grown and characterized. TEG field-effect transistors performance comparable to standard structures were obtained in preliminary layers. Exceptionally high Si doping levels roughly 20 times the maximum obtained with Al0.25Ga0.75As have been achieved with lattice matched AlInAs.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    URL: Article
    DOI: 10.1116/1.583751
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1987
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 3
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    The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance
    American Vacuum Society ; 1988
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 6, No. 2 ( 1988-03-01), p. 678-681
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 6, No. 2 ( 1988-03-01), p. 678-681
    Abstract: Ga0.47In0.53As–Al0.48In0.52As high-electron mobility transistors (HEMT’s) exhibit high transconductance and gain because of the high conductivities achievable in the structures. The effect of epitaxial layer design (spacer thickness and active channel thickness) on conductivity is examined. Device characteristics are examined as a function of active channel thickness. Reduced output conductance is observed for a 200 Å channel, but with a reduced transconductance.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    URL: Article
    DOI: 10.1116/1.584389
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1988
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 4
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    The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality
    AIP Publishing ; 1988
    In:  Journal of Applied Physics Vol. 64, No. 7 ( 1988-10-01), p. 3476-3480
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 64, No. 7 ( 1988-10-01), p. 3476-3480
    Abstract: The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4° off the (100). The heterojunction interface quality as determined by the full width at half-maximum of quantum-well photoluminescence is also improved when a substrate misoriented by 4° is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum-well structures.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.341482
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1988
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
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    Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures
    AIP Publishing ; 1988
    In:  Applied Physics Letters Vol. 52, No. 14 ( 1988-04-04), p. 1142-1143
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 52, No. 14 ( 1988-04-04), p. 1142-1143
    Abstract: GaInAs-AlInAs quantum well structures have been analyzed by low-temperature photoluminescence. The photoluminescence linewidth (full width at half-maximum) of thicker quantum wells ( & gt;10 nm) grown directly on AlInAs buffer layers shows that an inverse relationship exists between interface quality and AlInAs alloy quality in agreement with the theoretical analysis of J. Singh, S. Dudley, B. Davies, and K. K. Bajaj [J. Appl. Phys. 60, 3167 (1986)]. Thinner wells show much improved luminescence properties due to a growth of previous wells.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.99185
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1988
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
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    The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs
    Springer Science and Business Media LLC ; 1991
    In:  MRS Proceedings Vol. 241 ( 1991)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 241 ( 1991)
    Abstract: AlInAs and GaInAs lattice matched to InP and grown by MBE over a temperature range of 200 to 350°C (normal growth temperature of 500°C) has been used to enhance the device performance of inverted (where the donor layer lies below the channel) High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs), respectively. We will show that an AlInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs donor layer and GaInAs channel significantly reduces Si movement from the donor layer into the channel. This produces an inverted HEMT with a channel charge of 3.0×10 12 cm −2 and mobility of 9131 cm 2 /V-s, as compared to the same HEMT with a spacer grown at 500 °C resulting in a channel charge of 2.3×10 12 cm −2 and mobility of 4655 cm 2 /V-s. We will also show that a GaInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs emitter and GalnAs base of an npn HBT significantly reduces Be movement from the base into the emitter, thereby allowing higher Be base dopings (up to 1×10 20 cm −3 ) confined to 500 Å base widths, resulting in an AlInAs/GaInAs HBT with an f max of 73 GHz and f t of 110 GHz.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-241-259
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1991
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  • 7
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    Growth and properties of high mobility strained inverted AlInAs–GaInAs modulation doped structures
    American Vacuum Society ; 1992
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 10, No. 2 ( 1992-03-01), p. 1017-1019
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 10, No. 2 ( 1992-03-01), p. 1017-1019
    Abstract: GaInAs–AlInAs inverted modulation-doped structures exhibit degraded two-dimensional electron gas (2DEG) transport properties when grown under standard conditions. This results from the surface segregation of Si from the donor layer into the GaInAs channel layer. Consequently, the 2DEG has poor mobility due to increased ionized impurity scattering. We have obtained high mobility inverted structures through the inhibition of this surface segregation by growing the spacer layer at a greatly reduced substrate temperature. Inverted modulation doped structures optimized for high frequency device applications require the use of thin channel layers. In order to obtain a large charge density (≳ 2.3 × 1012 cm−2) with high quality transport characteristics, In-rich, strained channels are required. This paper presents the results of an investigation of the electronic and optical properties of strained, inverted, thin-channel modulation doped structures. Channel thicknesses of 50–200 Å and In compositions of 53% to 80% were investigated. A 300 K electron mobility of 13 000 cm2/V s was obtained with a sheet charge density of 2.4 × 1012 cm−2 for a 75 Å thick Ga0.27In0.73As channel.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.586402
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1992
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 8
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    Effect of Si movement on the electrical properties of inverted AlInAs–GaInAs modulation doped structures
    AIP Publishing ; 1991
    In:  Applied Physics Letters Vol. 59, No. 27 ( 1991-12-30), p. 3610-3612
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 59, No. 27 ( 1991-12-30), p. 3610-3612
    Abstract: Inverted modulation doped structures typically exhibit degraded electrical characteristics. For the AlInAs-GaInAs heterojunction system, the reduction in electron mobility for two-dimensional electron gases formed at inverted interfaces can be greater than 50% at 300 K as compared to those formed at normal interfaces. Our data show that the reduction in mobility is due to the movement of Si into the GaInAs channel. The Si movement is found to be dramatically reduced by growing the AlInAs spacer at the inverted interface at a substrate temperature of 300–350 °C. Device structures have been grown using this technique which exhibit the highest conductivity obtained for any 2DEG system.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.106394
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
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    Effect of growth conditions on the electrical and optical properties of Al x In1− x As (0.48〈 x 〈0.7)-Ga0.47In0.53As heterostructures
    AIP Publishing ; 1993
    In:  Applied Physics Letters Vol. 62, No. 1 ( 1993-01-04), p. 66-68
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 62, No. 1 ( 1993-01-04), p. 66-68
    Abstract: An increase of the Al- content of AlInAs layers above that of the composition which is lattice matched to InP (Al0.48In0.52As) has been shown to lead to increased Schottky barrier height [Lin et al., Appl. Phys. Lett. 49, 1593 (1986)]. This technique has been used to realize improved gate-to-drain breakdown voltage in AlInAs-GaInAs modulation-doped transistors designed for power applications. This letter reports the observation of an optimum growth temperature regime for the Al-rich Schottky layers in the modulation-doped structure. Growth in this regime results in the highest conductivity for modulation-doped structures as well as the highest quality interface formation as determined from low temperature photoluminescence measurements.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.108821
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 211245-0
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  • 10
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    Growth and properties of AlInAs–GaInAs alloys and quantum wells on (110) InP
    American Vacuum Society ; 1993
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 11, No. 3 ( 1993-05-01), p. 817-819
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 11, No. 3 ( 1993-05-01), p. 817-819
    Abstract: GaInAs and AlInAs structures have been grown on on-axis and misoriented [4°-(111) In-plane] (110) InP substrates. In general, the growth on the on-axis substrates shows a high density of defects; while the surface morphology using misoriented substrates is smooth. A smooth morphology is obtained on on-axis (110) InP, however, with a low substrate temperature and high V/III ratio. The photoluminescence properties of the individual alloys grown on (110) show high intensities, similar to that which can be obtained on (100) substrates, but the peaks are significantly broadened and shifted in energy. The interface quality of the GaInAs–AlInAs (110) heterojunction, inferred from the linewidths of quantum well emissions, is improved by growing at higher temperature.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.586753
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1993
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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