In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 12S ( 2000-12-01), p. 6836-
Abstract:
A Leica EBPG-5000 TFE electron beam lithography system has been evaluated and optimized. Sources of beam positional noise have been eliminated, resulting in an effectively useable spot size of less than 6 nm. Hydrogen silsesquioxane (HSQ) negative resist shows excellent resolution in combination with the fine-tuned instrument. Linewidths smaller than 8 nm have been reproducibly achieved at 100 kV under relaxed processing conditions, making HSQ an excellent test vehicle for system benchmarking in the nanometer regime. Using ultra-small vernier patterns exposed in HSQ resist, the intrinsic overlay accuracy of the system has been determined. A |mean| + 2 σ value better than 4 nm has been obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.6836
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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