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  • 1
    Online Resource
    Online Resource
    Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
    IOP Publishing ; 1990
    In:  Japanese Journal of Applied Physics Vol. 29, No. 12A ( 1990-12-01), p. L2345-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 29, No. 12A ( 1990-12-01), p. L2345-
    Abstract: In order to produce high-performance capacitors with a rough surface polysilicon film as a storage electrode, we investigate various fabrication conditions for polysilicon films. We fabricated such capacitors that attained 1.55 times as much capacitance as those with a conventional polysilicon electrode. Capacitors with the rough electrode show almost identical leakage current characteristics to those of conventional ones. In the evaluation of their reliability, we found that they have lifetimes of more than 1×10 10 seconds, which is sufficient for next-generation DRAM applications.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.29.L2345
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1990
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone
    IOP Publishing ; 1991
    In:  Japanese Journal of Applied Physics Vol. 30, No. 7R ( 1991-07-01), p. 1530-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 7R ( 1991-07-01), p. 1530-
    Abstract: Film characteristics of APCVD oxide using octamethylcyclo tetrasiloxane (OMCTS) and O 3 (AP-OMCTS oxide) have been investigated minutely for applications to advanced VLSI devices. Deposition characteristics of AP-OMCTS oxide strongly depend on deposition temperature and high quality films can be formed by increasing the deposition temperature. The step coverage shows a most smooth “flowing profile” around at 425°C. The dependence of the deposition characteristics on O 3 concentration can not be observed in contrast with the deposition characteristics of AP-TEOS oxide which evidently depend on the O 3 concentration. From these results, it is supposed that CVD reactions based on OMCTS-O 3 chemistry consist of the precursor production correspond to CH 3 elimination reaction with O radicals and the subsequent polymerization (dehydration) caused by thermal energy provided from hot substrate.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.30.1530
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
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