In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 3A ( 1987-03-01), p. L173-
Abstract:
Single domain GaAs layers were successfully grown on double domain Si(001) substrates by molecular beam epitaxy (MBE). During the growth, reflection high energy electron diffraction (RHEED) patterns of GaAs films grown on the Si substrates were monitored in situ . They changed gradually from initial spotty unreconstructed patterns to As stabilized (001)2×4 patterns. The morphologies of as grown surfaces and molten KOH etched surfaces of the films were observed by Nomarski optical microscope and also indicate that the films were single domain.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.26.L173
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1987
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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