In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 6S ( 2001-06-01), p. 4325-
Abstract:
An atomic force microscope (AFM)-based surface nanooxidation method was used to fabricate nanoscale p-GaAs oxide. We were able to realize an increase in the aspect ratio by a factor of 2 for oxide dots using a voltage modulation technique. The aspect ratios of oxide dots reached the maximum at a frequency of about 1000 Hz. Moreover, from a duty ratio dependence of aspect ratios of oxide dots, it was considered that optimization of an anodizing time per cycle of a pulsed voltage was necessary. The oxide could be etched by water. By adjusting both oxidation and etching process conditions, a groove with a 40 nm width and 6 nm depth was successfully fabricated. From these results, it was clear that the aspect ratio of p-GaAs oxide could be improved using a pulsed voltage, and optimization of process conditions, particularly the frequency and duty ratio of a pulsed voltage, was necessary to obtain p-GaAs oxide with a high aspect ratio.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.4325
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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