In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 10R ( 2011-10-01), p. 100204-
Abstract:
This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.100204
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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